TSD-EP05 SERIES-ZG Tianxin

TSD-EP05 SERIES

SMT Power Inductor

Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits.
Operating frequency: 50 kHz – 2.5 MHz.
Primary to secondary isolation: 1500 VDC.
Operating temperature range: -40°C~+125°C, self-temperature rise included.

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Datasheet

Product specifications

P/N	Primary Inductance(μH,Min.)	Leakage Inductance(μH,Max.)	DCR(Ω,Max.)			Turns Ratio(Pri.:Sec.)	Volt-time Product(V-μsec)	Capacitance Pri.-Sec.(pF,Max.)	SRF(MHz,Min)	Hi-pot Pri.-Sec.(VDC)	Sch.
P/N	Primary Inductance(μH,Min.)	Leakage Inductance(μH,Max.)	PRI.	SEC.1	SEC.2	Turns Ratio(Pri.:Sec.)	Volt-time Product(V-μsec)	Capacitance Pri.-Sec.(pF,Max.)	SRF(MHz,Min)	Hi-pot Pri.-Sec.(VDC)	Sch.

P/N	Primary Inductance(μH,Min.)	Leakage Inductance(μH,Max.)	DCR(Ω,Max.)			Turns Ratio(Pri.:Sec.)	Volt-time Product(V-μsec)	Capacitance Pri.-Sec.(pF,Max.)	SRF(MHz,Min)	Hi-pot Pri.-Sec.(VDC)	Sch.
P/N	Primary Inductance(μH,Min.)	Leakage Inductance(μH,Max.)	PRI.	SEC.1	SEC.2	Turns Ratio(Pri.:Sec.)	Volt-time Product(V-μsec)	Capacitance Pri.-Sec.(pF,Max.)	SRF(MHz,Min)	Hi-pot Pri.-Sec.(VDC)	Sch.
TSD-EP05S01	296	1.5	0.8	0.66		1	25.8	14	1.75	1500	1
TSD-EP05S02	680	4	1.65	0.86		1	40.8	14	1.25	1500	1
TSD-EP05S03	264	0.3	1.5	1.5	1.5	1	24.5	95	2.5	1500	2
TSD-EP05S04	330	0.6	1.4	0.65	0.79	1	24.5	18	2	1500	2

Notes:

1. All electrical specifications are referenced to 25°C ± 5°C ambient.
2. The primary inductance is measured at 100 kHz, 0.1 Vrms, 0 ADC.
3. The leakage inductance is measured at 100 kHz, 0.1 Vrms, 0 ADC between primary winding, and with all secondary pins are shorted.
4. The SRF is measured with coils connected in series using an Agilent/HP 4192 or equivalent.